Successful growth of a GaAs AlGaAs buried channel structure by one-step metallo-organic chemical vapor deposition and its application to laser array

Citation
Tg. Kim et al., Successful growth of a GaAs AlGaAs buried channel structure by one-step metallo-organic chemical vapor deposition and its application to laser array, J MAT SCI L, 18(6), 1999, pp. 439-441
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE LETTERS
ISSN journal
02618028 → ACNP
Volume
18
Issue
6
Year of publication
1999
Pages
439 - 441
Database
ISI
SICI code
0261-8028(19990315)18:6<439:SGOAGA>2.0.ZU;2-4