Transmission electron microscopy observation od CMOS devices of titanium self-aligned silicide technology with nitrogen (NS) implantation process

Authors
Jia, YM Lim, CW Bourdillon, AJ Boothroyd, C
Citation
Ym. Jia et al., Transmission electron microscopy observation od CMOS devices of titanium self-aligned silicide technology with nitrogen (NS) implantation process, J MAT SCI L, 18(5), 1999, pp. 385-388
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE LETTERS
ISSN journal
02618028 → ACNP
Volume
18
Issue
5
Year of publication
1999
Pages
385 - 388
Database
ISI
SICI code
0261-8028(19990301)18:5<385:TEMOOC>2.0.ZU;2-X