Diode R(0)A in p-type epitaxially grown undoped CdxHg1-xTe

R(0)A is an important measure of diode performance. In theory, it should be possible to predict R(0)A from material parameters; in particular composit ion, carrier concentration and lifetime. We have tested this hypothesis by making diodes in fully characterized material and comparing the measured an d predicted R(0)A. Three types of undoped epitaxial CdHgTe were used and th e junctions were formed by ion beam milling. At 192 K the predicted and mea sured R(0)A values are comparable. At this temperature, diode leakage is pr edominantly diffusion current from the p-side of the junction and analysis of the R(0)A versus hole concentration data shows that Auger generation is responsible. At 77 K the situation is more complicated due to n-side leakag e currents and possibly generation in the depletion layer.