DIRECT CALCULATION OF ELECTRONIC RAMAN-SCATTERING INTENSITY FOR CE3+ IN CS2NACECL6

Authors
Citation
M. Chua et Pa. Tanner, DIRECT CALCULATION OF ELECTRONIC RAMAN-SCATTERING INTENSITY FOR CE3+ IN CS2NACECL6, Chemical physics, 218(1-2), 1997, pp. 83-86
Citations number
21
Categorie Soggetti
Physics, Atomic, Molecular & Chemical
Journal title
ISSN journal
03010104
Volume
218
Issue
1-2
Year of publication
1997
Pages
83 - 86
Database
ISI
SICI code
0301-0104(1997)218:1-2<83:DCOERI>2.0.ZU;2-K
Abstract
The direct calculation of electronic Raman scattering intensities is p resented in detail for four transitions from the electronic ground sta te to crystal field levels within the F-2(5/2) and F-2(7/2) multiplet terms of Ce3+ in the cubic host lattice Cs2NaCeCl6. The agreement with experiment is good without contributions from g-electron states, and the transition intensity pathways involve all of the d-electron states with mostly comparable contributions. The results are also similar to those from the conventional Judd-Ofelt-Axe theory since the effective baricentre approximation may be most valid for Ce3+ out of all the la nthanide ions.