Electrochemical and etching behavior of InP and In0.53Ga0.47As in alkalinehypobromite solutions

The (photo)electrochemical and etching properties of InP and of In0.53Ga0.4 7As, lattice-matched to InP, in contact with alkaline OBr- solutions, are s tudied. Photocurrent doubling is observed at p-InP, and InP is etched very slowly. In0.53Ga0.47As is etched in a diffusion-limited way by OBr-. The re duction mechanism of OBr- at In0.53Ga0.47As depends upon the bias imposed a nd upon illumination. It was observed that, at In0.53Ga0.47As, the reductio n of OBr- and the etching by OBr- are kinetically coupled processes. The po ssible use of alkaline OBr- as a material-selective etchant for In0.53Ga0.4 7As vs. InP is discussed. (C) 1999 The Electrochemical Society. S0013-4651( 98)08-102-6. All rights reserved.