InP etching using chemically assisted ion beam etching (Cl-2/Ar) - Formation of InClx clusters under high concentration of chlorine

A chemically assisted ion beam etching system has been used to etch InP in a chlorine environment and to investigate the etching mechanisms. This pape r particularly presents unusual features observed after etching InP with hi gh chlorine concentration and relatively low temperature. They are the firs t direct observation of indium chloride clusters and their coalescence beha vior. Various types of roughnesses and etching profiles are described for d ifferent conditions (Cl-2 pressure and ion beam properties). The results po int out the importance of the substrate temperature during etching. (C) 199 9 The Electrochemical Society. S0013-4651(98)08-087-2. All rights reserved.