Laterally displaced gettering sites have been studied as an alternative to
traditional internal gettering and back-side gettering sites. Fe was diffus
ed laterally and captured, first by coulombic pairing with B in p-type Si,
and then by strategically placed ion implantation induced dislocation loops
. This localization of Fe was tracked by both deep level transient spectros
copy and capacitance-voltage measurements. As proof of the viability of the
gettering technique, laterally displaced gettering sites were formed adjac
ent to capacitors on various silicon-on-insulator (SOI) substrate types. Bo
th implantation induced dislocation loops and P diffusion were used for get
tering. An improvement in gate oxide integrity was observed for capacitors
with lateral gettering on all SOI types studied. (C) 1999 The Electrochemic
al Society. S0013-4651(98)07-110-9. All rights reserved.