Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition

Authors
Nesting, DC Kouvetakis, J Hearne, S Chason, E Tsong, IST
Citation
Dc. Nesting et al., Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition, J VAC SCI A, 17(3), 1999, pp. 891-894
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
17
Issue
3
Year of publication
1999
Pages
891 - 894
Database
ISI
SICI code
0734-2101(199905/06)17:3<891:RMOSAS>2.0.ZU;2-W
Abstract
The morphology and biaxial stress of amorphous boron films grown on silicon at 630 degrees C have been determined in situ and in real time using energ y dispersive x-ray reflectivity and multiple-beam optical stress sensor tec hniques. The capability to determine the morphology and stress of light-ele ment thin films in situ and in real time provides a unique opportunity to o ptimize the parameters of thin film deposition under chemical vapor deposit ion conditions. (C) 1999 American Vacuum Society. [S0734-2101(99)05203-3].