Magnetotransport measurements in p-SiGe quantum well samples show that
the Landau levels are ferromagnetically polarised at filling factor n
u = 2. It is also shown that the insulating phase observed in some sam
ples at nu = 1.5 is suppressed-when the ferromagnetic polarisation per
sists into the nu = 1 integer quantum Hall state. Similarities and dif
ferences between p-SiGe and high mobility Si-MOSFETs are also discusse
d. Crown copyright (C) 1997 Published by Elsevier Science Ltd.