LOW-THRESHOLD OVONIC SWITCHING IN A-SI-H INSB HETEROSTRUCTURES/

Authors
VENKATARAGHAVAN R RAO KSRK BHAT HL PAL S DUBEY GC
Citation
R. Venkataraghavan et al., LOW-THRESHOLD OVONIC SWITCHING IN A-SI-H INSB HETEROSTRUCTURES/, Solid state communications, 102(10), 1997, pp. 759-762
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
102
Issue
10
Year of publication
1997
Pages
759 - 762
Database
ISI
SICI code
0038-1098(1997)102:10<759:LOSIAI>2.0.ZU;2-S
Abstract
a-Si:H/InSb structures have been fabricated by glow discharge depositi on of a-Si on bulk InSb substrates in hydrogen atmosphere. The structu re shows interesting switching properties, toggling between a high res istance and a conducting state with OFF to ON resistance ratio of 10(6 ) at remarkably low threshold voltages of 0.3 V at room temperature. T he low threshold voltage for this structure, as compared to the higher switching threshold of about 30 V for other a-Si based structures, ha s been achieved by the use of InSb as a substrate, capable of high car rier injection. (C) 1997 Published by Elsevier Science Ltd.