Active matrix array technology has made possible the concept of flat panel
imaging systems for radiography. In the conventional approach a thin-film c
ircuit built on glass contains the necessary switching components (thin-fil
m transistors or TFTs) to readout an image formed in either a phosphor or p
hotoconductor layer. Extension of this concept to real time imaging-fluoros
copy-has had problems due to the very low noise required. A new design stra
tegy for fluoroscopic active matrix flat panel detectors has therefore been
investigated theoretically. In this approach, the active matrix has integr
ated thin-film amplifiers and readout electronics at each pixel and is call
ed the amplified pixel detector array (APDA). Each amplified pixel consists
of three thin-film transistors: an amplifier, a readout, and a reset TFT.
The performance of the APDA approach compared to the conventional active ma
trix was investigated for two semiconductors commonly used to construct act
ive matrix arrays-hydrogenated amorphous silicon and polycrystalline silico
n. The results showed that with amplification close to the pixel, the noise
from the external charge preamplifiers becomes insignificant. The thermal
and flicker noise of the readout and the amplifying TFTs at the pixel becom
e the dominant sources of noise. The magnitude of these noise sources is st
rongly dependent on the TFT geometry and its fabrication process. Both of t
hese could be optimized to make the APDA active matrix operate at lower noi
se levels than is possible with the conventional approach. However, the APD
A cannot be made to operate ideally (i.e., have noise limited only by the a
mount of radiation used) at the lowest exposure rate required in medical fl
uoroscopy. (C) 1999 American Association of Physicists in Medicine. [S0094-
2405(99)01205-5].