Thermal properties of tri(o-tolyl)bismuth for preparation of oxide thin films by metalorganic chemical vapor deposition

Thermal properties of tri (o-tolyl) bismuth (Bi (o-Tol)(3)) used as a bismu th precursor for metalorganic chemical vapor deposition(MOCVD) were evaluat ed. The saturated vapor pressure of Bi(o-Tol)(3) was observed under the dec omposition point, about 210 degrees C by means of vapor pressure measuremen t. The temperature dependence of the saturated vapor pressure of Bi(o-Tol)( 3) was determined as follows, log P-(evap.)Torr = -6267/T+13.45. It was con firmed that Bi(o-Tol)(3) has higher thermal stability compared with a conve ntional bismuth precursor, triphenylbismuth (BiPh3) by thermogravimetry and differential thermal analysis measurements of the compounds before and aft er preparation of oxide thin films by MOCVD method.