ATLAS prototype n-in-n and p-in-n silicon strip detectors from several manu
facturers were irradiated with 24 GeV protons at the CERN PS to a total flu
ence of 3 x 10(14) p/cm(2). This is equivalent to the maximum fluence expec
ted in the strip detector part of the silicon tracker after 10yr of operati
on. The ATLAS semiconductor tracker will be operated at -7 degrees C. Yearl
y warm-up periods of 2 days at 20 degrees C and 2 weeks at 17 degrees C are
foreseen for maintenance purposes (ATLAS inner Detector Technical Design R
ep., 1997). To study the long-term effects of radiation damage and warm-up
the detectors underwent controlled thermal annealing. The Ziock parameteris
ation was used to simulate the warm-up effects of 10yr on a shortened time
scale (H.J. Ziock et al., Nucl. Instr. and Meth. A 342 (1994) 96), Using th
is parameterisation the same amount of anti-annealing gained during 10 yr o
f warm-ups can be reached by storing the detectors for 21 days at 25 degree
s C. During the annealing period current-voltage and capacitance-voltage me
asurements were carried out at regular intervals. The full depletion voltag
e was then determined from the capacitance measurements and showed a clear
dependency on the measurement frequency and temperature. The evolution of t
he full depletion voltage as a function of annealing time is compared to th
e Ziock parameterisation. (C) 1999 Elsevier Science B.V. All rights reserve
d.