DIRECT-CURRENT ELECTRICAL-CONDUCTIVITY OF A GE-AU COMPOSITE THIN-FILMNEAR THE CRITICAL THRESHOLD

Citation
L. Ba et al., DIRECT-CURRENT ELECTRICAL-CONDUCTIVITY OF A GE-AU COMPOSITE THIN-FILMNEAR THE CRITICAL THRESHOLD, Journal of physics. Condensed matter, 9(20), 1997, pp. 4175-4183
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09538984
Volume
9
Issue
20
Year of publication
1997
Pages
4175 - 4183
Database
ISI
SICI code
0953-8984(1997)9:20<4175:DEOAGC>2.0.ZU;2-M
Abstract
The Ge-Au polycrystalline film was prepared by room-temperature ageing and thermal annealing with amorphous film. A transmission electron mi croscopy investigation showed that the Au grains grow from a size of 1 0 nm in the unannealed sample to a size of 100 nm in the annealed samp le. The correlation length was calculated in order to give a descripti on of morphology geometry. The DC electrical resistance was measured o ver the temperature range of 77-300 K. Percolation theory was used to interpret the conductivity dependence on metal content, which can be e xpressed as sigma(m) = sigma(0)(x - x(c))(t), where x(c) is about 50.4 5% and t is about 1.34 for unannealed samples and 1.55 for annealed sa mples. The similar electrical conductance of the unannealed and anneal ed samples shows that the electrical conductivity is not sensitive to the growth of Au grains.