Scanning near-field cathodoluminescence microscopy of an Si+ implanted andthermally annealed SiO2 layer

A scanning near-field cathodoluminescence microscope (SNCLM) is successfull y used to image the cathodoluminescence of an Si+ implanted and thermally a nnealed submicronic SiO2 layer. Owing to the subwavelength resolution of th e system a "cross-sectional" cathodoluminescence image was obtained. The in tensity image profile shows that sample luminescence results from the whole SiO2 layer confirming a preceding electroluminescence study. Sample lumine scence is attributed to point defects generated into the whole SiO2 layer d uring Si+ ion implantation and thermal annealing, (C) 1999 Elsevier Science B.V.