An actively compensated transimpedance amplifier has been designed and
realized in 0.5-mu m GaAs MESFET monolithic technology. Active induct
ors have been used to reduce overall chip size and to improve amplifie
r performance. Major measured features of the realized amplifier are a
50-dB Ohm transimpedance gain and better than -14-dB output match in
the 50 MHz-3.2 GHz band. (C) 1997 John Wiley & Sons, Inc.