The free-space oscillation of heterojunction GaAs AlGaAs Gunn diodes as a design guide

Citation
Ma. Harry et al., The free-space oscillation of heterojunction GaAs AlGaAs Gunn diodes as a design guide, SEMIC SCI T, 14(5), 1999, pp. L19-L20
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
14
Issue
5
Year of publication
1999
Pages
L19 - L20
Database
ISI
SICI code
0268-1242(199905)14:5<L19:TFOOHG>2.0.ZU;2-L
Abstract
We demonstrate that free-space oscillations can be used to estimate the opt imum frequency of operation of a heterojunction GaAs/AlGaAs Gunn diode, in terms of efficiency, when the device is placed in a cavity. The variation o f the natural frequency of oscillation with transit region length and poten tial bias has been measured and found to be in good agreement with results from Monte Carlo simulations.