Red lasers grown by all-solid-source molecular beam epitaxy

We have prepared high-power 600 nm spectral band (AlxGa1-x)(y)In1-yP/GazIn1 -zP/GaAs quantum well lasers using all-solid-source molecular beam epitaxy for layer growth. An output power up to 3 W in continuous wave mode has bee n demonstrated at the nominal wavelength of 670 nm, 2 W at 650 nm and 1 W a t 630 nm. The threshold current densities are 350-450 A cm(-2) for lambda a pproximate to 670 nm, 500-540 A cm(-2) for lambda approximate to 650 nm and less than 700 A cm(-2) for lambda approximate to 630 nm. The characteristi c temperature of threshold current falls within the range of 110 +/- 15 K a t 650 < lambda approximate to 670 nm and is about 60 K at lambda approximat e to 630 nm. The slope efficiency is between 0.50 and 0.58 W A(-1) per face t for uncoated devices of 1 mm in cavity length. Maximum observed wall-plug efficiencies are between 30 and 48% for mirror coated lasers. Preliminary lifetests have been carried out for the 650 and 670 nm lasers suggesting th at these lasers will be quite reliable in operation.