Deformation-induced defect levels in ZeSe crystals

Citation
P. Fernandez et al., Deformation-induced defect levels in ZeSe crystals, SEMIC SCI T, 14(5), 1999, pp. 430-434
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
14
Issue
5
Year of publication
1999
Pages
430 - 434
Database
ISI
SICI code
0268-1242(199905)14:5<430:DDLIZC>2.0.ZU;2-4
Abstract
The influence of defects, in particular the deformation-induced defects, on the luminescence of bulk ZnSe single crystals has been investigated by cat hodoluminescence (CL) in the scanning electron microscope. Deformation has been found to cause a reduction of the total CL intensity of the sample. CL images of deformed samples reveal dark slip bands. The CL spectrum of an u ndeformed crystal shows the near-band-edge emission at 2.8 eV and a broad b and peaked at 2.2 eV with a shoulder at about 2 eV. Deformation at low stra in causes only slight spectral changes while in a heavily deformed crystal a strong relative enhancement of the deep level band in the range 2-2.2 eV is observed. The relation of these spectral changes to the deformation-indu ced defects is discussed. The infrared spectra show the existence of broad bands at 0.95 and 1.27 eV. However, these emissions were found to be rather insensitive to deformation.