Epitaxial lateral overgrowth of GaAs: effect of doping on LPE growth behaviour

Results of epitaxial lateral overgrowth (ELO) of GaAs on (001) GaAs substra tes by liquid phase epitaxy are reported. We show that by introducing Si, S n or Te impurities to the Ga-As solution the vertical growth rate is reduce d while the lateral growth rate is significantly enhanced, which leads to a growth habit modification. Furthermore, the impurity incorporation into th e growing layer is different on the upper and side surfaces of the ELO, ref lecting the fundamental differences between the lateral and vertical growth modes. This phenomenon can be applied for studying the temporal developmen t of ELO layers.