Boundary scattering in wet-etched InAs GaSb heterostructure wires: with and without magnetic field

We report the observation of boundary scattering in damage-free wires made from InAs/GaSb quantum wells. Fabrication of very long wires has enabled us to observe boundary scattering contribution to the resistivity of these wi res both with and without a magnetic field. A very well defined region of s uppression of both held-induced and zero-field boundary scattering was obse rved. These effects were seen to become more pronounced as the width of the wires was reduced. Differences from boundary scattering in GaAs/AlGaAs het erostructure wires are pointed out. Results of a study of the dependence of boundary scattering on temperature are also described.