Ultraviolet photodetector on the basis of heterojunction with textured interface

This paper is devoted to elaboration and investigation of ultraviolet photo detector (UVPD) on the basis of heterojunctions of A(3)B(5) semiconductor/t ransparent conducting layer with microrelief interface. The methods of rand om microrelief of desirable morphology fabrication for (100) GaAs and InP s urfaces are described. AFM images of GaAs and InP surfaces with optimal mic rorelief are presented as well. The spectral responses of Au/(GaAs, InP) an d ITO/GaAs photodetectors in the spectral range from 0.25 to 0.5 mu m in de pendence on the interface microrelief morphology and passivating treatments have been investigated. Photodetectors with enhanced UV response at lambda = 0.26-0.40 mu m have been obtained on the basis of Au/GaAs (S-lambda = 0. 17-0.21 A/W) and Au/InP (S-lambda = 0.12-0.23 A/W) heterostructures by the developed technology of interface texturation and passivation. (C) 1999 Els evier Science S.A. All rights reserved.