The polarization sensitivity of optical absorption in tensile strained GaAs InAlAs double quantum wells

The electric field dependence of the polarization sensitivity of optical ab sorption in tensile-strained GaAs/InAlAs double quantum wells (DQWs) was in vestigated theoretically. The coupling effects and electric-field-induced c hange of eigenstates in various DQW structures were analysed within the fra mework of the Bastard envelope function approximation using the transfer ma trix method (TMM). The absorption coefficient was calculated with excitonic effects included. The simulation results show that it is possible to chang e the polarization characteristics in the DQW structures by adjusting the a pplied electric field. (C) 1999 Academic Press.