Electric force microscope (EFM) testing is based on the non-linear Coulomb
force interaction between a conducting EFM probe and a test point located o
n the conducting line of an integrated circuit (IC), It has been reported a
s a new and most promising testing system for IC internal contactless diagn
osis without any IC preparation and without restrictions with respect to am
bient conditions. But there are still very few testing techniques for the l
ogic and the temporal analysis of digital signals, An experimental set-up t
o solve this deficit is realized, The present state of the performance is d
emonstrated by means of measurement results in the megahertz range. Pattern
recognition and quantitative voltage measurements at distinct test points
on a 1 mu m conducting line are presented. Furthermore, IC operation states
on a three-line bus structure were characterized by the newly developed te
sting techniques of stroboscopic voltage contrast and logic state mapping.
The EFM now allows pattern recognition and characterization of internal IC
operation states in correlation to topography. Copyright (C) 1999 John Wile
y & Sons, Ltd.