InAsSb InAsP strained-layer superlattice injection lasers operating at 4.0mu m grown by metal-organic chemical vapor deposition

We report high power mid-infrared electrical injection operation of laser d iodes based on InAsSb/ InAsP strained-layer superlattices grown on InAs sub strate by metal-organic chemical vapor deposition. The broad-area laser dio des with 100 mu m aperture and 1800 mu m cavity length demonstrate peak out put powers of 546 and 94 mW in pulsed and cw operation respectively at 100 K with a threshold current density as low as 100 A/cm(2). (C) 1999 American Institute of Physics. [S0003-6951(99)01123-7].