A vertical cavity light emitting InGaN quantum well heterostructure

A method is described for fabricating a vertical cavity light emitting stru cture for nitride semiconductors. The process involves the separation of a InGaN/GaN/AlGaN quantum well heterostructure from its sapphire substrate an its enclosure by a pair of high reflectivity, low loss dielectric mirrors to define the optical resonator. We have demonstrated a cavity Q factor exc eeding 600 in initial experiments, suggesting that the approach can be usef ul for blue and near ultraviolet resonant cavity light emitting diodes and vertical cavity lasers. (C) 1999 American Institute of Physics. [S0003-6951 (99)00823-2].