A method is described for fabricating a vertical cavity light emitting stru
cture for nitride semiconductors. The process involves the separation of a
InGaN/GaN/AlGaN quantum well heterostructure from its sapphire substrate an
its enclosure by a pair of high reflectivity, low loss dielectric mirrors
to define the optical resonator. We have demonstrated a cavity Q factor exc
eeding 600 in initial experiments, suggesting that the approach can be usef
ul for blue and near ultraviolet resonant cavity light emitting diodes and
vertical cavity lasers. (C) 1999 American Institute of Physics. [S0003-6951
(99)00823-2].