A vertical cavity light emitting InGaN quantum well heterostructure

Citation
Yk. Song et al., A vertical cavity light emitting InGaN quantum well heterostructure, APPL PHYS L, 74(23), 1999, pp. 3441-3443
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
23
Year of publication
1999
Pages
3441 - 3443
Database
ISI
SICI code
0003-6951(19990607)74:23<3441:AVCLEI>2.0.ZU;2-7
Abstract
A method is described for fabricating a vertical cavity light emitting stru cture for nitride semiconductors. The process involves the separation of a InGaN/GaN/AlGaN quantum well heterostructure from its sapphire substrate an its enclosure by a pair of high reflectivity, low loss dielectric mirrors to define the optical resonator. We have demonstrated a cavity Q factor exc eeding 600 in initial experiments, suggesting that the approach can be usef ul for blue and near ultraviolet resonant cavity light emitting diodes and vertical cavity lasers. (C) 1999 American Institute of Physics. [S0003-6951 (99)00823-2].