Citation
Jm. Lee et al., Improvements in electrical properties of (Ba,Sr)TiO3 capacitor with chemical vapor deposited Pt top electrode using Pt hexafluoroacetylacetonate, APPL PHYS L, 74(23), 1999, pp. 3489-3491
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951
→ ACNP
Volume
74
Issue
23
Year of publication
1999
Pages
3489 - 3491
Database
ISI
SICI code
0003-6951(19990607)74:23<3489:IIEPO(>2.0.ZU;2-E
Abstract
Electrical properties of (Bs,Sr)TiO3 (BST) thin films are characterized wit
h sputtered and metal organic chemical vapor deposited (MOCVD) Pt top elect
rodes. BST films with MOCVD Pt top electrodes, which were deposited using P
t(CF3COCHCOCF3)(2) (Pt-HFA) as a precursor, showed less leakage current wit
hout bulged curves and a higher dielectric constant than those with sputter
ed Pt top electrodes. The improvement of electrical properties seems to res
ult from the reduction of interface trap sites with the incorporation of fl
uorine atoms from HFA ligands. (C) 1999 American Institute of Physics. [S00
03-6951(99)00623-3].