High conduction-band offset of AlInAsSb InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy

Authors
Chang, JR Su, YK Lin, CL Wu, KM Lu, YT Jaw, DH Shiao, HP Lin, W
Citation
Jr. Chang et al., High conduction-band offset of AlInAsSb InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy, APPL PHYS L, 74(23), 1999, pp. 3495-3497
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
23
Year of publication
1999
Pages
3495 - 3497
Database
ISI
SICI code
0003-6951(19990607)74:23<3495:HCOOAI>2.0.ZU;2-L
Abstract
Unstrained Al0.66In0.34As0.85Sb0.15/In0.53Ga0.47As multiple-quantum-well (M QW) structures have been grown by metalorganic vapor phase epitaxy. Low-tem perature photoluminescence was performed for these MQW structures. We compa red the experimental data with the theoretical calculations. The conduction -band offset ratio of AlInAsSb/InGaAs heterojunction was set as an adjustab le parameter in the theoretical model. We estimated the conduction-band off set ratio to be 0.90+/-0.05 for the Al0.66In0.34As0.85Sb0.15/In0.53Ga0.47As heterojunction. (C) 1999 American Institute of Physics. [S0003-6951(99)048 23-8].