Relaxation of the Si lattice strain in the Si(001)-SiO2 interface by annealing in N2O

Authors
Ha, YH Kim, S Lee, SY Kim, JH Baek, DH Kim, HK Moon, DW
Citation
Yh. Ha et al., Relaxation of the Si lattice strain in the Si(001)-SiO2 interface by annealing in N2O, APPL PHYS L, 74(23), 1999, pp. 3510-3512
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
23
Year of publication
1999
Pages
3510 - 3512
Database
ISI
SICI code
0003-6951(19990607)74:23<3510:ROTSLS>2.0.ZU;2-J
Abstract
It was clearly observed with medium energy ion scattering spectroscopy that the strain in the Si(001)-SiO2 interface of thermal oxides is relaxed by a nnealing in N2O. The strain relaxation could be correlated with the improve d hot-electron hardness of the nitrided oxides compared with the thermal ox ides. Based on the direct observation of the strain relaxation, it is sugge sted that the incorporated N atoms at the interface release the strain and increase the immunity of trap generation under the current stress. (C) 1999 American Institute of Physics. [S0003-6951(99)04523-4].