Nitrogen incorporation kinetics in metalorganic molecular beam epitaxy of GaAsN

Epitaxial layers of GaAsN were grown on GaAs by metalorganic molecular beam epitaxy using dimethylhydrazine, triethylgallium, and conventional arsenic sources. The nitrogen incorporation in GaAsN was studied by varying the ar senic and gallium fluxes, at growth temperatures between 430 and 500 degree s C. The nitrogen incorporation kinetics and growth mechanism have been mod eled by assuming formation of an adduct of trimethylgallium and dimethylhyd razine. The model accounts for experimentally observed relationships betwee n growth rates and incorporation of N into GaAsN, fluxes of Ga, As, and N, and the growth temperature. (C) 1999 American Institute of Physics. [S0003- 6951(99)03122-8].