In this work we analyze conditions of generation of high frequency coherent
acoustic phonons in a biased semiconductor superlattice. We show that the
electron perpendicular transport provides the electron population inversion
for interwell phonon-assisted transitions and generation of phonons propag
ating along the superlattice axis. The generation rate is large and exceeds
the phonon losses in perfect superlattices. Under such conditions, the pho
non subsystem is unstable with respect to generation of the coherent phonon
modes. Influence of the phonon spectra modification in the superlattice on
the generation rate is examined. Effects restricting the intensity of the
phonon generation are also pointed out. (C) 1999 American Institute of Phys
ics. [S0003-6951(99)00323-X].