Sp. Ahrenkiel et al., Atomic ordering and temperature-dependent transient photoconductivity in Ga0.47In0.53As, APPL PHYS L, 74(23), 1999, pp. 3534-3536
Influences of CuPtB atomic ordering on transient photoconductivity in epita
xial Ga0.47In0.53As films grown by metal-organic chemical vapor deposition
are examined. Low-injection lifetimes of several ms are measured in double-
variant ordered samples at 77 K; these lifetimes decrease rapidly with temp
eratures above 180 K, giving a thermal activation energy for recombination
of 0.19 eV. Single-variant ordered samples exhibit typical lifetimes of 30-
60 mu s, with no noticeable temperature dependence up to 300 K. Charge sepa
ration in double-variant samples may be driven by a type-II band alignment
between ordered and disordered regions, or by an alternating internal elect
rical polarization between ordered variants. Recombination in both double-
and single-variant samples may be influenced by inhibited transport across
antiphase boundaries. (C) 1999 American Institute of Physics. [S0003-6951(9
9)05223-7].