The effect of bottom electrode on the performance of thin film based capacitors in the gigahertz region

Capacitors in metal-insulator-metal structure have been fabricated with dif ferent bottom electrodes. It has been found that the observed losses are en ormous at gigahertz frequencies unless due care is taken not only for the c onductivity of the bottom electrode but also its thickness. Very thin botto m electrodes (thickness similar to 100 nm) modify the dielectric response s ubstantially and major loss contributions arise from the substrate, the ele ctrode resistance, and the contacts. A simple approach is suggested to mode l and experimentally evaluate the electrode resistance. (C) 1999 American I nstitute of Physics. [S0003-6951(99)00723-8].