High temperature proton implantation induced photosensitivity of Ge-doped SiO2 planar waveguides

The possibility of using keV proton implantation at 800 degrees C to enhanc e the photosensitivity of Ge-doped silica has been investigated. Room tempe rature implantation induced defects indicated by absorption at ultraviolet (UV) (<200 nm) and visible wavelengths (>550 nm) were annealed during impla ntation at 800 degrees C to leave stable photosensitive neutral oxygen vaca ncy (NOV) centers with an absorption peak at similar to 240 nm. The stable NOV defects were photochemically bleached after UV exposure, a process whic h is accompanied by a change in UV absorption. Positron annihilation spectr oscopy demonstrated the effectiveness of implantation at 800 degrees C in a nnealing the implantation induced damage. (C) 1999 American Institute of Ph ysics. [S0003-6951(99)04322-3].