Observation of growth modes during metal-organic chemical vapor depositionof GaN

Authors
Stephenson, GB Eastman, JA Thompson, C Auciello, O Thompson, LJ Munkholm, A Fini, P DenBaars, SP Speck, JS
Citation
Gb. Stephenson et al., Observation of growth modes during metal-organic chemical vapor depositionof GaN, APPL PHYS L, 74(22), 1999, pp. 3326-3328
Citations number
29
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
22
Year of publication
1999
Pages
3326 - 3328
Database
ISI
SICI code
0003-6951(19990531)74:22<3326:OOGMDM>2.0.ZU;2-J
Abstract
We present real-time surface x-ray scattering measurements during homoepita xial growth of GaN by metal-organic chemical vapor deposition. We observed intensity oscillations corresponding to the completion of each monolayer du ring layer-by-layer growth. The growth rate was found to be temperature ind ependent and Ga-transport limited. Transitions between step-flow, layer-by- layer, and three-dimensional growth modes were determined as a function of temperature and growth rate. (C) 1999 American Institute of Physics. [S0003 -6951(99)01622-8].