Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon

Authors
Lee, BH Jeon, Y Zawadzki, K Qi, WJ Lee, J
Citation
Bh. Lee et al., Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon, APPL PHYS L, 74(21), 1999, pp. 3143-3145
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
21
Year of publication
1999
Pages
3143 - 3145
Database
ISI
SICI code
0003-6951(19990524)74:21<3143:EOILGO>2.0.ZU;2-F
Abstract
Effects of interfacial layer growth on reactively sputter-deposited TiO2 fi lms were studied. Leakage current was reduced to 10(-8) A/cm(2) at 11 V aft er annealing in oxygen ambient and showed tunneling-like temperature depend ence. As the interfacial layer grew, interface states and hysteresis were i mproved significantly. However, the reliability was degraded as the anneali ng temperature increased. (C) 1999 American Institute of Physics. [S0003-69 51(99)03121-6].