Domain configuration in pulsed laser deposited films of rhombohedral PbZr0.65Ti0.35O3

Citation
M. Tyunina et al., Domain configuration in pulsed laser deposited films of rhombohedral PbZr0.65Ti0.35O3, APPL PHYS L, 74(21), 1999, pp. 3191-3193
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
21
Year of publication
1999
Pages
3191 - 3193
Database
ISI
SICI code
0003-6951(19990524)74:21<3191:DCIPLD>2.0.ZU;2-I
Abstract
Highly oriented perovskite ferroelectric films of rhombohedral PbZr0.65Ti0. 35O3, with [001] direction normal to the substrate surface, have been produ ced by pulsed laser deposition on La0.5Sr0.5CoO3/MgO (100). The domains in the films were detected using atomic force microscopy, registering the elec tromechanical response of the films in the presence of a low ac field. We o bserve a direct correlation between domain configuration and the microstruc tural features in the as-deposited films. In the large (similar to 200 nm) grains, an ordered polydomain configuration with {100} domain boundaries an d "puckering" of the top surface of the grains are observed. The smaller gr ains are found to be single domain. The observed domain configuration in ou r films is significantly different from the lamellar pattern reported recen tly. (C) 1999 American Institute of Physics. [S0003-6951(99)05221-3].