Interface engineering in preparation of organic surface-emitting diodes

Authors
Citation
Ls. Hung et Cw. Tang, Interface engineering in preparation of organic surface-emitting diodes, APPL PHYS L, 74(21), 1999, pp. 3209-3211
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
21
Year of publication
1999
Pages
3209 - 3211
Database
ISI
SICI code
0003-6951(19990524)74:21<3209:IEIPOO>2.0.ZU;2-Q
Abstract
Surface-emitting organic light emitting diode (OLED) was prepared by sputte r deposition of indium-tin-oxide on a buffered organic layer structure. Con firming a previous report, a thin film of copper phthalocyanine (CuPc) was found to be a useful buffer layer in preventing sputter damage to the OLED layer structure, particularly the underlying Alq emissive layer. However, t he CuPc layer forms an electron-injection barrier with the Alq layer, resul ting in increased electron-hole recombination in the nonemissive CuPc layer , and thus a substantial reduction in electroluminescence efficiency. Incor poration of Li at the CuPc/Alq interface was found to reduce the injection barrier at the interface and recover the overall device efficiency with goo d surface emission characteristics. (C) 1999 American Institute of Physics. [S0003-6951(99)00421-0].