Spiral growth of InGaN/InGaN quantum wells due to Si doping in the barrierlayers (vol 74, pg 1153, 1999)

Authors
Uchida, K Yang, T Goto, S Mishima, T Niwa, A Gotoh, J
Citation
K. Uchida et al., Spiral growth of InGaN/InGaN quantum wells due to Si doping in the barrierlayers (vol 74, pg 1153, 1999), APPL PHYS L, 74(21), 1999, pp. 3230-3230
Citations number
1
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
21
Year of publication
1999
Pages
3230 - 3230
Database
ISI
SICI code
0003-6951(19990524)74:21<3230:SGOIQW>2.0.ZU;2-#