Static SIMS: metastable decay and peak intensities

Citation
Is. Gilmore et Mp. Seah, Static SIMS: metastable decay and peak intensities, APPL SURF S, 145, 1999, pp. 26-30
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
145
Year of publication
1999
Pages
26 - 30
Database
ISI
SICI code
0169-4332(199904)145:<26:SSMDAP>2.0.ZU;2-8
Abstract
The decay of a metastable ion to a daughter ion along the flight path of a time-of-flight (ToF) mass spectrometer leads to well-defined peak structure in the mass spectrum. Through interference, these daughter ion peaks can r educe the detection limits in static SIMS and lead to uncertainties in both the true peak area intensity and the peak position. The area of the peak f or the metastable parent ion is reduced to an extent which depends on its h alf life, the analyser design and the chosen instrument settings. These int ensity changes directly affect the quality and reproducibility of spectra. The decay of metastable ions is analysed for the reference material, PTFE, used in a recent inter-laboratory study. A method is developed, for a ToF r eflectron analyser, to characterise the decay process of the parent ion so that both parent and daughter are accurately identified. This method involv es measuring the transit time shift of the metastable peak as a function of the reflectron voltage. To illustrate the method, the mass of the C4F4+ pa rent ion is determined to an uncertainty of 0.6 amu. This parent ion decays by emission of CF20 to C3F2+. The choice of instrument parameters to avoid interference from metastable peaks and to improve data transferability is discussed. Crown Copyright (C) 1999 Published by Elsevier Science B.V. All rights reserved.