Quantitative analysis of a-Si1-xCx : H thin films

Citation
D. Gracin et al., Quantitative analysis of a-Si1-xCx : H thin films, APPL SURF S, 145, 1999, pp. 188-191
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
145
Year of publication
1999
Pages
188 - 191
Database
ISI
SICI code
0169-4332(199904)145:<188:QAOA:H>2.0.ZU;2-6
Abstract
The composition of a-Si1-xCx:H films, deposited by magnetron sputtering, wa s measured by AES (Auger Electron Spectroscopy), RES (Rutherford Backscatte ring Spectrometry) using both, protons and alpha-particles, ERDA (Elastic R ecoil Detection Analysis) and FTIR spectroscopy. The results obtained by al l three methods show agreement in C-C/C-Si ratio within the experimental er ror. However, the AES somewhat underestimates the silicon concentrations, w hich is discussed as a consequence of chemical bonding and matrix effects. The hydrogen concentrations obtained by ERDA are typically about 30% higher than those estimated by FTIR, possibly due to the presence of non-bonded h ydrogen in the film. (C) 1999 Elsevier Science B.V. All rights reserved.