Ton sputtering, surface topography, SPM and surface analysis of electronicmaterials

Two side effects introduced on surfaces of electronic materials by ion bomb ardment, namely compositional changes (for compound semiconductors) and top ography changes are discussed. Based on the relative elemental sensitivity factor method with matrix corrections for quantitative AES or XPS analysis, a sputter correction factor is defined to compensate for bombardment induc ed surface compositional changes. Using several popular preferential sputte r models and comparing their predictions to a synopsis of published experim ental AES and XPS measurements on argon bombarded binary compound semicondu ctors, a sputter correction factor for these materials are proposed. The ex tent of bombardment-induced topography depends primarily on the substrate m aterial while the ion beam characteristics play only a secondary role. Due to the complexity of and the many processes involved in ion/solid interacti ons, bombardment-induced topography is not well understood. Several quantit ative and qualitative theories have been proposed to explain the experiment al data. Most of these theories are based on SEM or TEM data. The major dis advantage of these data is the lack of quantitative information. The advent of SPM (scanning probe microscopy) and the subsequent development of softw are have reversed this. A brief summary of SPM (AFM and STM) investigations of bombardment induced topography on semiconductor surfaces is given. Most studies have concentrated on the topography on Si, Ge, GaAs and InP surfac es with special emphasis on ripple development. (C) 1999 Elsevier Science B .V. All rights reserved.