Characterization of rapid thermal processing oxynitrides by SIMS and XPS analyses

Aim of this work is the characterisation of oxynitride films grown by rapid thermal processing (RTP) using nitrous oxide and nitric oxide precursors. The thickness of the oxynitrided layers is about 7 nm. Secondary ion mass s pectrometry (SIMS) and X-ray photoemission spectroscopy (XPS) have been emp loyed to obtain a complete chemical characterisation. XPS analyses have bee n performed at different depths after removal of oxynitride layers by chemi cal etching. SIMS and XPS analyses have been performed on the same samples after a reoxidation treatment as well. Depending on the precursors used, th e oxynitrides show different characteristics. (C) 1999 Elsevier Science B.V . All rights reserved.