Azide complexes as forerunners for metallic thin films on Si surfaces

Citation
R. Divan et al., Azide complexes as forerunners for metallic thin films on Si surfaces, APPL SURF S, 145, 1999, pp. 319-323
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
145
Year of publication
1999
Pages
319 - 323
Database
ISI
SICI code
0169-4332(199904)145:<319:ACAFFM>2.0.ZU;2-2
Abstract
The deposition of films of metals, metal oxides and metal nitrides on surfa ces has attracted a great deal of interest due to their importance in the s emiconductor industry. An alternative method, which totally avoids the resi st technology, is to use the photodecomposition of azide complexes layers. We have initiated a study about photodecomposition of new compounds [Cr(N-3 )L(H2O)(2)](NO3)(2), [Ni(N-3)(2)L-2]. 10H(2)O, [CuN3L](NO3) (L = triethanol amine) and [Cr (N-3)L'(H2O)(4)](NO3)(2), [Cu(N-3)L'(H2O)](NO3) (L' = dietha nolamine) comparatively with [Cr(NH3)(5)N-3](2+), [Ni(NH3)(5)N-3](+) and [C u(NH3)(3)N-3](+). We have selected the best wavelengths for each of the com plexes after a detailed study of UV-spectra. (C) 1999 Elsevier Science B.V. All rights reserved.