Route for controlled growth of ultrathin polyimide films with Si-C bondingto Si(100)-2 X 1

In this high resolution electron energy loss spectroscopy study, we demonst rate the growth of an ultrathin polyimide film on Si(100)-2 X 1 exhibiting Si-C bonds at the organic film/substrate interface. For the controlled form ation of the film, which has been carried out by molecular deposition, male ic anhydride, 1,4-phenylene diamine and pyromellitic dianhydride have been sequentially deposited on Si(100)-2 X 1 at room temperature. Imidisation wa s initiated by thermally curing the amic acid film at 430 degrees C. The vi brational data confirm the absence of oxidised silicon at the film/substrat e interface. (C) 1999 Elsevier Science B.V. All rights reserved.