The dynamics of quantum dot formation in the InAs on GaAs(001) system: growth rate effects

Reflectance anisotropy spectroscopy (RAS) has been used to monitor the form ation and development of InAs islands grown onto GaAs(001) substrates in re al time. This is possible because the signal at a photon energy of 4.0 eV i s mainly sensitive to the thickness of the continuous inter-island wetting layer in the thickness range of interest. This makes it possible, for the f irst time, to follow the partition of material between the wetting layer an d islands. Monitoring the deposition of 2 monolayers of material at a fixed growth temperature of 475 degrees C reveals important details of the growt h process, such as the fact that the fraction of the incident flux incorpor ated immediately into the islands is largely insensitive to growth rate. (C ) 1999 Elsevier Science B.V. All rights reserved.