Submonolayer growth of Co on H-passivated Si(100) surfaces and nanoscale metallization with Co on patterned H-Si(100)

Nucleation and growth of submonolayer Co coverage on H-passivated Si(100) s urfaces was studied in situ by UHV-STM. Non-epitaxial Co islands are formed after room temperature deposition of Co on H-Si(100); the island number de nsity grows with Co coverage in agreement with predictions of an isotropic two-dimensional random walker. Moreover, the fabrication of Co-silicide nan owires (width < 10 nm) was explored by STM nanolithography on H-Si(100) and subsequent Co deposition. The room temperature wires appeared granular, wh ile those annealed at 683 K showed a more compact structure. (C) 1999 Elsev ier Science B.V. All rights reserved.