GATE-VOLTAGE STUDIES OF DISCRETE ELECTRONIC STATES IN ALUMINUM NANOPARTICLES

We have investigated the spectrum of discrete electronic states in sin gle, nm-scale Al particles incorporated into new tunneling transistors , complete with a gate electrode. The addition of the gate has allowed (a) measurements of the electronic spectra for different numbers of e lectrons in the same particle, (b) greatly improved resolution and qua litatively new results for spectra within superconducting particles, a nd (c) detailed studies of the gate-voltage dependence of the resonanc e level widths, which have directly demonstrated the effects of nonequ ilibrium excitations.