Properties of polycarbosilane-derived silicon carbide fibers with various C/Si compositions

Citation
M. Takeda et al., Properties of polycarbosilane-derived silicon carbide fibers with various C/Si compositions, COMP SCI T, 59(6), 1999, pp. 787-792
Citations number
18
Categorie Soggetti
Material Science & Engineering
Journal title
COMPOSITES SCIENCE AND TECHNOLOGY
ISSN journal
02663538 → ACNP
Volume
59
Issue
6
Year of publication
1999
Pages
787 - 792
Database
ISI
SICI code
0266-3538(1999)59:6<787:POPSCF>2.0.ZU;2-G
Abstract
SIC fibers with various C/Si compositions have been synthesized by the use of an irradiation-curing process. The polycarbosilane(PCS) fibers were cure d by irradiation with an electron beam in a helium atmosphere. After curing , the fibers were pyrolyzed at 1573 K under controlled conditions, and SIC fibers with C/Si of 0.84 to 1.68 were obtained. The chemical composition of the fibers was <1 wt% 0, <0.2 wt% N, <0.1 wt% H, and balance of Si and C. Physical and mechanical properties, crystalline growth behavior under therm al exposure, oxidation resistance, and creep properties at elevated tempera ture were examined. As a result, these fibers are revealed to have quite di fferent properties with different C/Si chemical compositions. (C) 1999 Else vier Science Ltd. All rights reserved.