Growth of GaN on highly mismatched substrate and its application to novel devices

Authors
Amano, H Iwaya, M Katsuragawa, M Takeuchi, T Kato, H Akasaki, I
Citation
H. Amano et al., Growth of GaN on highly mismatched substrate and its application to novel devices, DIAM RELAT, 8(2-5), 1999, pp. 302-304
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
8
Issue
2-5
Year of publication
1999
Pages
302 - 304
Database
ISI
SICI code
0925-9635(199903)8:2-5<302:GOGOHM>2.0.ZU;2-8
Abstract
Crystallization process of the low-temperature-deposited AlN buffer layer o n sapphire, and atomic step motion of the crystallized AlN has been observe d in situ by TEM. Insertion of the second low-temperature-deposited buffer layer between high-temperature-grown GaN is found to reduce threading dislo cations and to eradicate etch-pit formation. (C) 1999 Elsevier Science S.A. All rights reserved.